BL8812.pdf• 满足六级能效标准
• 原边反馈，无需光耦和 BL431
• ±5%的恒压恒流精度
• 待机功耗小于 75mw
• 内置 2A 650V 的高压 MOS
• 最大功率 12W
• 内置线电压补偿功能
• 完善的保护功能：
VDD 过压保护功能
VDD 欠压保护功能
FB 过欠压保护功能
输出短路保护功能
输出过流保护功能
所有管脚开路保护功能
OTP 保护功能
• 采用 SOP-7 的封装形式
• Primary-side sensing and regulation without
TL431 and opto-coupler
• High precision constant voltage and current
regulation at universal AC input
• Multi-mode PWM/PFM operation
for efficiency
improving
• Integrated 1A 650V MOSFET
• Good dynamic response
• Programmable CV and CC regulation
• Built-in primary winding inductance
compensation
• Programmable cable drop compensation
• No need for control loop compensation
• Audio noise free operation
• Built-in leading edge blanking (LEB)
• Ultra low start-up current and low operating
current
• Comprehensive protection coverage with
auto-recovery
• On-chip OTP and external OTP
• VDD over voltage protection
• VDD under voltage lockout with
hysteresis (UVLO)
• Cycle-by-Cycle current limiting
• Feedback loop open protection
• Output short circuit protection
